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Freescale Semiconductor Technical Data
Document Number: MRF6S19100H Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 16.1 dB Drain Efficiency -- 28% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19100HR3 MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S19100HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S19100HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 398 2.3 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 77C, 22 W CW Symbol RJC Value (1,2) 0.44 0.50 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S19100HR3 MRF6S19100HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 900 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 0.1 -- 2 2.8 0.21 5.3 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 15 26 -- -- -- 16.1 28 - 37 - 51 - 15 18 -- - 35 - 48 -9 dB % dBc dBc dB
MRF6S19100HR3 MRF6S19100HSR3 2 RF Device Data Freescale Semiconductor
+ B1 VBIAS R2 RF INPUT + C5 Z3 C3 C1 C2 DUT Z4 R1 C4 Z5 Z6 Z7 Z8 Z9 C7 C8
+ C9
+ C10 C11 Z10 C6
+ C12 Z11
VSUPPLY
RF OUTPUT
Z1
Z2
Z1 Z2 Z3 Z4 Z5 Z6
0.130 x 0.084 Microstrip 0.360 x 0.084 Microstrip 0.260 x 0.084 Microstrip 0.950 x 0.084 Microstrip 0.457 x 0.940 Microstrip 0.083 x 0.940 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.091 x 0.900 Microstrip 0.493 x 0.900 Microstrip 0.440 x 0.195 Microstrip 0.470 x 0.084 Microstrip 0.735 x 0.084 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C2 C3 C4, C7 C5 C6 C8, C10 C9 C11 C12 R1 R2 RF Bead 0.6- 4.5 pF Variable Capacitors, Gigatronics 15 pF Chip Capacitor 5.6 pF Chip Capacitors 1 F, 50 V Tantalum Chip Capacitor 43 pF Chip Capacitor 22 F, 35 V Tantalum Chip Capacitors 10 F, 35 V Tantalum Chip Capacitor 0.1 F Chip Capacitor (1825) 100 F, 50 V Electrolytic Capacitor, Radial 12 , 1/4 W Chip Resistor (1206) 2 kW, 1/4 W Chip Resistor (1206) Description Part Number 2743019447 27271SL 100B150CP500X 100B5R6JP500X T491C105K050AS 100B430CP500X T491X226K035AS T491C106K035AS C1825C14J5RAC MCR50V107M8X11 CRCW120612R0F100 CRCW12062001F100 Manufacturer Fair- Rite Johanson Dielectrics ATC Kemet Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 3
C8 C9 B1 VGG R1 C12
R2 C5 C4
C7
C11 C10
+ VDD -
C1
C2
C3
C6
CUT OUT AREA
MRF6S19100H/HS Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
MRF6S19100HR3 MRF6S19100HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 675 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 16.6 16.4 Gps, POWER GAIN (dB) Gps 16.2 16 15.8 IRL 15.6 ACPR 1940 1950 1960 1970 1980 IM3 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 25 -35 -41 -47 -53 1990 D 29 27
15.4 1930
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
16.2 D 16 Gps, POWER GAIN (dB) 15.8 15.6 15.4 15.2 15 14.8 1930 IRL ACPR Gps VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
42 40 38 -25 -30 -35 -40 -45 1990
IM3
1940
1950
1960
1970
1980
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg.
18 IDQ = 1300 mA 17 Gps, POWER GAIN (dB) 1125 mA 16 900 mA 675 mA 450 mA 14 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing 13 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 IDQ = 450 mA -35 -40 -45 -50 -55 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP 900 mA 1125 mA 1300 mA VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing
15
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
0 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 0.1 1 10 100 TWO-TONE SPACING (MHz) VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 900 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 30 31 32 33 34 35 36 37 38 39 40 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz P1dB = 50.9 dBm (124.2 W) Actual P3dB = 51.56 dBm (143.2 W) Ideal
3rd Order 5th Order 7th Order
Figure 7. Intermodulation Distortion Products versus Tone Spacing
Figure 8. Pulse CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
60 50 40 30 20 10 0 4
-30 ACPR -40 -50 Gps -60 -70 200
10 Pout, OUTPUT POWER (WATTS) AVG.
100
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
17 Gps 16 Gps, POWER GAIN (dB) 15 14 13 12 D 11 10 3 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz
70 D, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 200
18 16.5 Gps, POWER GAIN (dB) 15 13.5 12 10.5 9 7.5 6 0 25 50 75 100 125 150 175 200 Pout, OUTPUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6
Figure 11. Power Gain versus Output Power
IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
-10 D IM3 -20
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS X AMPS2)
108
107
106 90
100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -7.5 -IM3 in 1.2288 MHz Integrated BW
1.2288 MHz Channel BW
+IM3 in 1.2288 MHz Integrated BW
-ACPR in 30 kHz Integrated BW
+ACPR in 30 kHz Integrated BW
Figure 13. 2 - Carrier CCDF N - CDMA
-6
-4.5
-3
-1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 7
f = 1990 MHz Zload f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz
Zo = 5
VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg. f MHz 1930 1960 1990 Zsource 1.57 - j3.50 1.83 - j3.29 2.34 - j3.71 Zload 2.26 - j2.31 2.22 - j2.13 2.14 - j2.00
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S19100HR3 MRF6S19100HSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF6S19100HR3 MRF6S19100HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6S19100HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S19100HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 11
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MRF6S19100HR3 MRF6S19100HSR3
Rev. 12 4, 5/2006 Document Number: MRF6S19100H
RF Device Data Freescale Semiconductor

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